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Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

  • Kyung Ha Lee (a1), Byeong Yeon Moon (a1), Yoo Chan Chung (a1), Seung Min Lee (a1), Sung Chul Kim (a1), Donggil Kim (a2) and Jin Jang (a1)...

Abstract

We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) Amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10−2 and > 10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-S.i.H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

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Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

  • Kyung Ha Lee (a1), Byeong Yeon Moon (a1), Yoo Chan Chung (a1), Seung Min Lee (a1), Sung Chul Kim (a1), Donggil Kim (a2) and Jin Jang (a1)...

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