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The Effect of Intrinsic Passivation Stress on Stress in Encapsulated Interconnect Lines

  • Anne Sauter Mack (a1) and Paul Flinn (a1)

Abstract

The stress in an encapsulated metal line has been calculated using the finite element technique for two passivation stress conditions. It is found that the stress-state in the passivation has a negligible effect on the stress in the metal line. The dominant factors affecting metal line stress are the passivation temperature, the thermal expansion coefficient difference between the metal line and the substrate, and the passivation modulus.

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References

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[1] Yue, J.T., Funston, W.P. and Taylor, R.V., Stress induced voids in aluminum interconnects during IC processing, Proceedings IRPS 23, 126137 (1985).
[2] Greenebaum, B., Sauter, A.I., Flinn, P.A. and Nix, W.D., Stress in metal lines under passivation; comparison of experiment with finite element calculations, Appl. Phys. Lett. 58 (17), 18451847 (1991).
[3] Kikkawa, T. and Endo, N., Influence of hydrogen evolution from plasma-deposited silicon nitride on underlying aluminum deformations, J. Vac. Sci. Tech. B 11, 228233 (1993).
[4] ANSYS finite element program, Swanson Analysis Systems, Inc., copyright 1994.
[5] Flinn, P.A., Gardner, D.S., Nix, W.D., Measurement and interpretation of stress in aluminum-based metallization as a function of thermal history, IEEE Trans. Electron Dev. ED–34 (3), 689699 (1987).
[6] Sauter, A.I. and Nix, W.D., Thermal stresses in aluminum lines bonded to substrates, IEEE Trans. CHMT 15 (4), 594600 (1992).

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