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Effect of Interface on Capture and Emission Processes Via Deep Centers

Published online by Cambridge University Press:  21 February 2011

I. N. Yassievich
Affiliation:
Ioffe Physico-Technical Institute, Department of Semiconductor Heterostructures, Politeknicheskaya 26, 194021 St. Petersburg, Russia
A. A. Pakhomov
Affiliation:
Ioffe Physico-Technical Institute, Department of Semiconductor Heterostructures, Politeknicheskaya 26, 194021 St. Petersburg, Russia
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Abstract

It is shown that the carrier capture and emission rates by deep centers situated near an interface (crystal surface or heterojunction) dramatically increase.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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