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Effect of Interface and Surface on the Performance of a-Si:H TFTs

  • Jin Jang (a1), Moon Youn Jung (a1), Sun Sung Yoo (a1), Hyon Kyun Song (a1) and Jung Mok Jun (a1)...

Abstract

We have studied the effects of interface and surface on the performance of hydrogenated amorphous silicon(a-Si:H) thin film transistors. The effects of rf power, the buffer layer between the gate insulator and a-Si:H, and the surface oxidation on the performance on the a-Si:H TFTs have been investigated. By introducing suitable buffer layer, we can increase the mobility up to 2.1 cm2/Vs. The surface oxidation gives rise to the electron accumulation near the surface.

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Effect of Interface and Surface on the Performance of a-Si:H TFTs

  • Jin Jang (a1), Moon Youn Jung (a1), Sun Sung Yoo (a1), Hyon Kyun Song (a1) and Jung Mok Jun (a1)...

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