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Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates

Published online by Cambridge University Press:  01 February 2011

Hauk Han ,
Jay Lewis  and
Terry Alford
Hauk Han
Affiliation:
Hauk.Han@asu.edu, Arizona state univerisity, School of Materials, Mill and University drive, Tempe, AZ, 85287, United States
Jay Lewis
Affiliation:
jlewis@rti.org, RTI International, Center for Materials and Electronic Technologies, Research Triangle Park, NC, 27709, United States
Terry Alford
Affiliation:
ta@asu.edu, Arizona State University, School of Materials and Flexible Display Center at ASU, Tempe, AZ, 85287, United States
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Abstract

Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Keywords

transparent conductorthin filmoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I05-16
Copyright
Copyright © Materials Research Society 2008

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References

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