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Effect of Hydroxyl Group on the Characteristics of Solution Processed n- and p-type OFETs using Poly(p-silsesquioxane) Derivatives as a Gate Insulator

Published online by Cambridge University Press:  01 February 2011

Yutaka Ohmori
Affiliation:
ohmori@casi.osaka-u.ac.jp, Osaka University, Ctr for Adv Sci & Innov (CASI), 2-1 Yamada-Oka, Suita, Osaka, 565-0871, Japan, +81-6-6879-4212, +81-6-6879-4212
Hirotake Kajii
Affiliation:
kajii@cassi.osaka-u.ac.jp, Osaka University, Ctr for Adv Sci & Innov (CASI), 2-1 Yamada-Oka, Suita, Osaka, 565-0871, Japan
Shohei Fukuda
Affiliation:
s-fukuda@casi.osaka-u.ac.jp, Osaka University, Ctr for Adv Sci & Innov (CASI), 2-1 Yamada-Oka, Suita, Osaka, 565-0871, Japan
Toshiyuki Ogata
Affiliation:
t-ogata@tok.co.jp, Tokyo Ohka Kogyo Co. Ltd., 1590 Tabata Samukawa-Cho, Koza-Gun, 253-0114, Japan
Motoki Takahashi
Affiliation:
mo-takahashi@tok.co.jp, Tokyo Ohka Kogyo Co. Ltd., 1590 Tabata Samukawa-Cho, Koza-Gun, 253-0114, Japan
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Abstract

Organic field effect transistors (OFETs) fabricated on the polymer substrate including conductive organic materials and polymeric gate insulator is one of promising devices for the flexible electronic devices. For OFETs with a conductive organic layer formed on the gate insulating materials, the performance of devices strongly depends on the molecular structure of the gate insulators. In this study, we investigated the effect of hydroxyl group of gate insulating materials on the characteristics of n- and p-type OFETs utilizing [6,6]-phenyl C61-butyric acid methyl ester (PCBM), α, ω-dihexylsexithiophene (DH6T) and pentacene OFETs as a conducting layer, respectively. Poly(p-silsesquioxane) (PSQ) derivatives are used as a polymeric gate insulator, which containes various ratios of phenol-group with a hydroxyl group bonded to a phenyl ring in the side chain of their molecular structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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