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Effect of Hydrogen Treatment on High Efficiency Electroluminescence Device Using Silicon Nanocrystals

  • K. Sato (a1), T. Izumi (a1), M. Iwase (a2), Y. Show (a3), S. Nozaki (a3) and H. Morisaki (a3)...

Abstract

We have fabricated the electroluminescence (EL) device using silicon (Si) nanocrystals, which were formed on Si substrate by co-sputtering of Si and silicon dioxide (SiO2). By treating with the Si nanocrystals in the hydrofluoric (HF) acid solution, the SiO2 region of the luminous layer reduced, and then, the electrons were efficiently injected in the Si nanocrystals. At the same time, Pb-center (non-radiative recombination center) was decreased by hydrogen termination to the Si-dangling bond in the interface between the Si nanocrystals and the SiO2 layer From these effects of the HF treatment, the high efficiency red light emission with the external quantum efficiency (EQE) of 0.35 % was obtained from the HF treated EL device under the operating voltage of +4.5 V.

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Effect of Hydrogen Treatment on High Efficiency Electroluminescence Device Using Silicon Nanocrystals

  • K. Sato (a1), T. Izumi (a1), M. Iwase (a2), Y. Show (a3), S. Nozaki (a3) and H. Morisaki (a3)...

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