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Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC Mis Structures

Published online by Cambridge University Press:  10 February 2011

C. C. Tin ,
A. Gichuhi ,
M. J. Bozack ,
C. G. Shannon  and
C. K. Teh
C. C. Tin
Affiliation:
Department of Physics, 206 Allison Laboratory, Auburn University, AL 36849, cctin@physics.auburn.edu
A. Gichuhi
Affiliation:
Department of Chemistry, 179 Chemistry Building, Auburn University, AL 36849
M. J. Bozack
Affiliation:
Department of Physics, 206 Allison Laboratory, Auburn University, AL 36849, cctin@physics.auburn.edu
C. G. Shannon
Affiliation:
Department of Chemistry, 179 Chemistry Building, Auburn University, AL 36849
C. K. Teh
Affiliation:
ATA, 2060 Evergreen Drive, Auburn, AL 36830
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Abstract

Aluminum nitride (AlN) is a promising material as gate insulator for 6H-SiC metal-insulator-semiconductor (MlS)-based devices. Using metalorganic chemical vapor deposition (MOCVD)-grown AlN, we have recently fabricated Au/AlN/6H-SiC MIS structures with different AlN/6H-SiC interfacial characteristics depending on the AlN growth procedures. We have also found that the use of hydrogen chloride gas is effective in improving the capacitance-voltage characteristics of the AlN/6H-SiC structure. The reason for such improvement is not well understood and several possible mechanisms for such improvement include factors such as substrate surface morphology and surface contaminants. In this paper, we will examine the relationship between surface morphology of the substrates and the capacitance-voltage characteristics of Au/AlN/6H-SiC structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 475
Copyright
Copyright © Materials Research Society 1997

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References

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