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Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC Mis Structures
Published online by Cambridge University Press: 10 February 2011
Abstract
Aluminum nitride (AlN) is a promising material as gate insulator for 6H-SiC metal-insulator-semiconductor (MlS)-based devices. Using metalorganic chemical vapor deposition (MOCVD)-grown AlN, we have recently fabricated Au/AlN/6H-SiC MIS structures with different AlN/6H-SiC interfacial characteristics depending on the AlN growth procedures. We have also found that the use of hydrogen chloride gas is effective in improving the capacitance-voltage characteristics of the AlN/6H-SiC structure. The reason for such improvement is not well understood and several possible mechanisms for such improvement include factors such as substrate surface morphology and surface contaminants. In this paper, we will examine the relationship between surface morphology of the substrates and the capacitance-voltage characteristics of Au/AlN/6H-SiC structures.
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- Copyright © Materials Research Society 1997