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Effect of Highly Strained Superlattices on the Threading Dislocation Behavior in GaAs Grown on Silicon

Published online by Cambridge University Press:  22 February 2011

N. A. El-Masry ,
J. C. L. Tarn ,
N. H. Karam  and
S. M. Bedair
N. A. El-Masry
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7907
J. C. L. Tarn
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7907
N. H. Karam
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, N.C.27695-7911
S. M. Bedair
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, N.C.27695-7911
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Abstract

GaAs films grown on silicon substrates suffer from a high density of threading dislocations. One technique to reduce these dislocations is the use of strained layered superlattices (SLS) InGaAs-GaAsP as buffer. We found that the effectiveness and interactions of the SLS with the threading dislocations strongly depend on the dislocation type and the strain field of the superlattices. Because of the high dislocation density in GaAs/Si, the SLS acts as a medium for dislocation interactions and annihilations. Highly strained SLS (∼ 2%) is required to bend the dislocations and keep them bent at the strained interfaces. We found that the combination between annealing and a highly strained superlattice coupled with selective epitaxy is an effective approach to reduce the threading dislocations in GaAs grown on Si. Transmission electron microscopy is used to study these effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 165
Copyright
Copyright © Materials Research Society 1989

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References

1. Choi, C., Otsuka, N., Munns, G., Houdre, R., Morkoq, H., Zhang, S.L., Levi, D. and Klein, M.V., Appl. Phys. Lett. 50, 992(1987).10.1063/1.97956CrossRefGoogle Scholar
2. Lee, J.W., Salerno, J.P., Gale, R.P. and Fan, J.C.C., Mat. Res. Symp. Proc. 91, 33(1987).10.1557/PROC-91-33Google Scholar
3. Okamoto, H., Watanabe, Y., Kadota, Y. and Ohmachi, Y., Japanese J. Appl. Phys. Lett. 50, 992(1987).Google Scholar
4. Chand, N., People, R., Baiocchi, F.A., Wecht, K.W. and Yao, A.Y., Appl. Phys. Lett. 49, 815 (1986).10.1063/1.97556CrossRefGoogle Scholar
5. El-Masry, N.A., Tam, J.C.L., Humphreys, T.P., Hamaguchi, N., Karam, N.H. and Bedair, S.M., Appl. Phys. Lett. 51, 1608 (1987).10.1063/1.98570Google Scholar
6. El-masry, N.A., Tam, J.C.L. and Karam, N.H., J. Appl. Phys. 64, 3672(1988).10.1063/1.341409Google Scholar
7. Mathews, J.W. and Blackeslee, A.E., J. Cryst. Growth 27, 118 (1974).Google Scholar
8. Mathews, J.W., Mader, S. and Light, T.B., J. Appl. Phys. 41, 3800 (1970).10.1063/1.1659510Google Scholar