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The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties

  • Yoko Takada (a1), Naoki Okamoto (a1), Takeyasu Saito (a1), Kazuo Kondo (a1), Takeshi Yoshimura (a2), Norifumi Fujimura (a2), Koji Higuchi (a3), Akira Kitajima (a3) and Hideo Iwai (a4)...

Abstract

We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) top electrodes using chemical solution deposition. Then, the effects of a thin conductive ITO buffer layer between the Pt bottom electrode and PLZT thin film were investigated in combination with top electrode (ITO/PLZT/ITO/Pt). The H2 degradation resistance of ITO/PLZT/ITO/Pt capacitors with a 3- and 28-nm-thick buffer layer was improved to 78 and 85%, respectively, from 60% without a buffer layer. The time-of-flight secondary ion mass spectrometry profiles indicated the intensity of H ion increased after 45 min forming gas (3% H2/balance N2) annealing.

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The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties

  • Yoko Takada (a1), Naoki Okamoto (a1), Takeyasu Saito (a1), Kazuo Kondo (a1), Takeshi Yoshimura (a2), Norifumi Fujimura (a2), Koji Higuchi (a3), Akira Kitajima (a3) and Hideo Iwai (a4)...

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