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The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

  • Marcus Q. Baines (a1), David Cherns (a1), Julia W. P. Hsu (a2) and Michael J. Manfra (a2)

Abstract

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

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