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Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

Published online by Cambridge University Press:  01 February 2011

C.A. Wang ,
D.A. Shiau ,
M.K. Connors ,
L.R. Danielson ,
G. Nichols ,
D. Donetsky ,
S. Anikeev  and
G. Belenky
C.A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
D.A. Shiau
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
M.K. Connors
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
L.R. Danielson
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
G. Nichols
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108
D. Donetsky
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
S. Anikeev
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
G. Belenky
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
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Abstract

The effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectance monitoring is shown to be sensitive for observation of surface degradation during growth interruption, and this data was correlated with materials characterization by high-resolution x-ray diffraction and 4K photoluminescence (PL). Minority-carrier lifetime by time-resolved PL was used to determine interfacial recombination velocity of GaInAsSb/AlGaAsSb and GaInAsSb/GaSb double heterostructures grown with and without interruption, respectively. GaInAsSb/AlGaAsSb TPV devices grown without growth interruption have a slightly higher performance compared to those grown with interruption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B8.4
Copyright
Copyright © Materials Research Society 2003

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