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Effect of Growth Conditions on Structural and Electrical Properties of Ga-doped ZnO Films Grown by Plasma-assisted MBE

  • Vitaliy Avrutin (a1), H.Y. Liu (a2), Natalia Izyumskaya (a3), Michael A. Reshchikov (a4), Ümit Özgür (a5), A.V. Kvit (a6), Paul Voyles (a7) and Hadis Morkoç (a8)...

Abstract

ZnO has recently attracted a great deal of attention as a material for transparent contacts in light emitters and adsorbers. ZnO films heavily doped with Ga (carrier concentration in the range of 1020 - 1021 cm-3) were grown on a-plane sapphire substrates by RF plasma-assisted molecular beam epitaxy. Oxygen pressure during growth (i.e. metal (Zn+Ga)–to–oxygen ratio) was found to have a crucial effect on structural, electrical, and optical properties of the ZnO:Ga films. As-grown layers prepared under metal-rich conditions exhibited resistivities below 3×10-4 Ω-cm and an optical transparency exceeding 90% in the visible spectral range. In contrast, the films grown under the oxygen-rich conditions required thermal activation and showed inferior structural, electrical, and optical characteristics even after annealing.

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