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Effect of Growth Conditions on Structural and Electrical Properties of Ga-doped ZnO Films Grown by Plasma-assisted MBE

  • Vitaliy Avrutin (a1), H.Y. Liu (a2), Natalia Izyumskaya (a3), Michael A. Reshchikov (a4), Ümit Özgür (a5), A.V. Kvit (a6), Paul Voyles (a7) and Hadis Morkoç (a8)...


ZnO has recently attracted a great deal of attention as a material for transparent contacts in light emitters and adsorbers. ZnO films heavily doped with Ga (carrier concentration in the range of 1020 - 1021 cm-3) were grown on a-plane sapphire substrates by RF plasma-assisted molecular beam epitaxy. Oxygen pressure during growth (i.e. metal (Zn+Ga)–to–oxygen ratio) was found to have a crucial effect on structural, electrical, and optical properties of the ZnO:Ga films. As-grown layers prepared under metal-rich conditions exhibited resistivities below 3×10-4 Ω-cm and an optical transparency exceeding 90% in the visible spectral range. In contrast, the films grown under the oxygen-rich conditions required thermal activation and showed inferior structural, electrical, and optical characteristics even after annealing.



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