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Effect of Growth Conditions on Optical Response of GaAs Grown at Low Substrate Temperature by MBE

Published online by Cambridge University Press:  15 February 2011

W. J. Schaff ,
S. D. Offsey ,
X. J. Song ,
L. F. Eastman ,
T. B. Norris ,
W. J. Sha  and
G. A. Mourou
W. J. Schaff
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, New York 14853
S. D. Offsey
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, New York 14853
X. J. Song
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, New York 14853
L. F. Eastman
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, New York 14853
T. B. Norris
Affiliation:
Ultrafast Science Lab, University of Michigan, Ann Arbor, Michigan 48109
W. J. Sha
Affiliation:
Ultrafast Science Lab, University of Michigan, Ann Arbor, Michigan 48109
G. A. Mourou
Affiliation:
Ultrafast Science Lab, University of Michigan, Ann Arbor, Michigan 48109
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Abstract

The effect of growth conditions on the properties of GaAs grown by molecular beam epitaxy at low substrate temperatures has been studied. It has been found that the response time to 100 fsec 830nm light pulses is a function of substrate temperature and arsenic flux. The reason for variation of optical response with growth conditions is related to the nature of the incorporation of excess arsenic. A recent model proposed by Warren and others is invoked to explain the change in optical response with growth conditions. Further substantiation of this model comes from experiments on the annealing of low substrate temperature GaAs which has been doped with silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 51
Copyright
Copyright © Materials Research Society 1992

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