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Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

W. L. Samey ,
L. Salamanca-Riba ,
P. Zhou ,
M. G. Spencer ,
C. Taylor ,
R. P. Sharma  and
K. A. Jones
W. L. Samey
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
L. Salamanca-Riba
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
P. Zhou
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington D.C.
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington D.C.
C. Taylor
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington D.C.
R. P. Sharma
Affiliation:
Center for Superconductivity, University of Maryland, College Park, MD
K. A. Jones
Affiliation:
U.S. Army Research Laboratory, Adelphi, MD
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Abstract

SiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 185
Copyright
Copyright © Materials Research Society 1999

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References

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