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Effect of GaN Surface Treatment on the Morphological and Optoelectronic Response of Violet Light Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Muhammad Jamil ,
James R. Grandusky  and
Fatemeh Shahedipour-Sandvik
Muhammad Jamil
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-State University of New York, 255 Fuller Rd, Albany, NY 12203, U.S.A.
James R. Grandusky
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-State University of New York, 255 Fuller Rd, Albany, NY 12203, U.S.A.
Fatemeh Shahedipour-Sandvik
Affiliation:
College of Nanoscale Science and Engineering, University at Albany-State University of New York, 255 Fuller Rd, Albany, NY 12203, U.S.A.
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Abstract

We report on the study of the effect of various surface chemical treatment processes of n-GaN template layers used for subsequent growth of light emitting diode (LED) structures. The treatment procedure included cleaning in organic solvents, organic solvents followed by 5 minutes of HCl, organic solvents and 5 minutes of HCl followed by 2 minutes and finally 10 minutes of HF treatment. Chemical, optical and electrical properties of the surfaces of GaN and InGaN-based LED structures were systematically investigated by x-ray photoemission spectroscopy (XPS), auger electron spectroscopy (AES), atomic force microscopy (AFM), photoluminescence (PL) and electroluminescence (EL) spectroscopy. GaN layers that were grown on the samples treated with HCl and HF showed dramatically different surfaces having high density of 3D structures with high roughness. As measured by AFM, growth of the LED structure on top of the GaN layer continued the 3D-growth mode. LED structures grown on the HCl and HF treated GaN template layers showed minimal to no PL and EL emission and failed after a short period. We suggest a qualitative model of the growth that could potentially explain the underlying phenomena leading to such pronounced changes in the optoelectronic properties and surface conditions of the LED structures due to the treatment of the initial template layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E1.8
Copyright
Copyright © Materials Research Society 2005

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References

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