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Effect of Fast Electron Irradiation on Electrical and Optical Properties of CdGeAs2 and ZnGep2

Published online by Cambridge University Press:  10 February 2011

I. Zwieback ,
J. Maffetone ,
D. Perlov ,
J. Harper ,
W. Ruderman ,
K. Bachmann  and
N. Dietz
I. Zwieback
Affiliation:
INRAD Inc., Northvale, NJ
J. Maffetone
Affiliation:
INRAD Inc., Northvale, NJ
D. Perlov
Affiliation:
INRAD Inc., Northvale, NJ
J. Harper
Affiliation:
INRAD Inc., Northvale, NJ
W. Ruderman
Affiliation:
INRAD Inc., Northvale, NJ
K. Bachmann
Affiliation:
North Carolina State University, Raleigh, NC
N. Dietz
Affiliation:
North Carolina State University, Raleigh, NC
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Abstract

We report on the effects of fast electron irradiation on the optical absorption (α) of CdGeAs2and ZnGeP2 and on the electrical properties of CdGeAs2. In p-CdGeAs2 irradiation led to the reduction in α and an increase in the electrical resistivity. The lowest values of α (about 0.1 cm' at 5µm<λ<10µm) were obtained on irradiated crystals of p-type with the highest degree of compensation. Further accumulation of the electron dose caused conversion to n-type and deterioration of the optical transmission. In ZnGeP2 irradiation caused a decrease in a at λ>0.85 λm and increase in α at λ<0.85 μm. At λ=2.05 μm, α for the o-ray could be reduced to less than 0.08 cm−1. At higher doses, saturation in α was observed. The effects of irradiation are discussed in connection with possible mechanisms of optical absorption in CdGeAs2 and ZnGeP2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 409
Copyright
Copyright © Materials Research Society 2000

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