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Effect of Excimer Laser Fluence Gradient on Lateral Grain Growth in Crystallization of a-Si Thin Films

  • Minghong Lee (a1), Seungjae Moon (a1), Mutsuko Hatano (a2), Kenkichi Suzuki (a3) and Costas P. Grigoropoulos (a1)...

Abstract

In order to clarify the relationship between excimer laser fluence gradient and the length of lateral grain growth, the laser fluence is modulated by a beam mask. The fluence distribution is measured by using a negative UV photoresist. The lateral growth length and the grain directionality are improved with increasing fluence gradient. Lateral growth length of about 1.5 [.proportional]m is achieved by using a single laser pulse without substrate heating on a 50 nm-thick a-Si film by enforcing high fluence gradient. Electrical conductance measurement is used to probe the solidification dynamics. The lateral solidification velocity is found to be about 7 m/s.

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Effect of Excimer Laser Fluence Gradient on Lateral Grain Growth in Crystallization of a-Si Thin Films

  • Minghong Lee (a1), Seungjae Moon (a1), Mutsuko Hatano (a2), Kenkichi Suzuki (a3) and Costas P. Grigoropoulos (a1)...

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