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Effect of Elevated Implant Temperature on Amorphization and Activation in As-implanted Silicon-on-insulator Layers

  • Katherine L. Saenger (a1), Stephen W. Bedell (a2), Matthew Copel (a3), Amlan Majumdar (a4), John A. Ott (a5), Joel P. de Souza (a6), Steven J. Koester (a7), Donald R. Wall (a8) and Devendra K. Sadana (a9)...

Abstract

The ion implantation steps used in fabricating field effect transistors in ultrathin (6 to 30 nm) silicon-on-insulator (UTSOI) substrates present many challenges. Deep source/drain (S/D) implants in UTSOI layers are a particular concern, since it can be difficult to implant the desired dose without amorphizing the entire SOI thickness. In a first study, we investigated the effect of implant temperature (20 to 300 °C) on the sheet resistance (Rs) of 28 nm thick SOI layers implanted with As+ at an energy of 50 keV and a dose of 3 × 1015 /cm2, and found Rs values after activation sharply lower for samples implanted at the highest temperature. In a second study, on 8 nm thick SOI layers implanted with As+ at an energy of 0.75 keV and doses in the range 0.5 to 2 × 1015/cm2, the benefits of the elevated implantation temperature were less clear. Explanations for these effects, supported by microscopy, medium energy ion scattering (MEIS), and optical reflectance data, will be discussed.

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Keywords

Effect of Elevated Implant Temperature on Amorphization and Activation in As-implanted Silicon-on-insulator Layers

  • Katherine L. Saenger (a1), Stephen W. Bedell (a2), Matthew Copel (a3), Amlan Majumdar (a4), John A. Ott (a5), Joel P. de Souza (a6), Steven J. Koester (a7), Donald R. Wall (a8) and Devendra K. Sadana (a9)...

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