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Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

B. Ea-Kim ,
F. Varniere ,
M. C. Hugon ,
B. Agius ,
R. Bisaro  and
J. Olivier
B. Ea-Kim
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
F. Varniere
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
M. C. Hugon
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
B. Agius
Affiliation:
Université de Paris Sud, BP 127,91403 ORSAY CEDEX FRANCE
R. Bisaro
Affiliation:
Thomson-CSF LCR, Domaine de Corbeville, 91404 ORSAY CEDEX FRANCE.
J. Olivier
Affiliation:
Thomson-CSF LCR, Domaine de Corbeville, 91404 ORSAY CEDEX FRANCE.
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Abstract

The electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700°C. It is pointed out that the “heating rates” to reach 700°C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800°C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200°C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 μC/cm2 on Pt and RuO1.65 respectively) and low leakage current about 10−11 A/cm2 on Pt and 10−6 A/cm2 on RuO1.65.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 163
Copyright
Copyright © Materials Research Society 1996

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