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The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC

Published online by Cambridge University Press:  10 February 2011

A. O. Evwaraye ,
S. R. Smith  and
W. C. Mitchel
A. O. Evwaraye
Affiliation:
University of Dayton, Physics Department, 300 College Park, Dayton, OH 45469-2314
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, OH 45469-0178
W. C. Mitchel
Affiliation:
Materials & Manufacturing Directorate, Air Force Research Laboratory, MLPO Wright-Patterson Air Force Base, OH 45377-7707
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Abstract

Thermal admittance spectroscopy has been used to study the thermal activation energy of nitrogen at the hexagonal and cubic sites in 4H-SiC as function of net doping concentration. The net doping concentration- of te samples, which was determined from 1/C2 vs. V plots, ranges from 1.5 × 1014 cm−3 to 4 × 1018 cm−3. The thermal activation energy of nitrogen was determined to be Ee O.054 eV and Ee O.101 eV for nitrogen at hexagonal and cubic sites respectively for ND - NA ≤ 1016 cm−3. As the free carrier concentration increases from 1016 cm−3 to 1.0 × 1018 cm3, the thermal activation energy of nitrogen at the hexagonal site decreases from 54 meV to 24 meV. At ND - NA ≥1.0 × 10 cm−3 hopping conduction is the only conduction mechanism and has an activation energy of 3-9 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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References

1. Gotz, W., Schoner, A., Pensl, G., Suttrop, W., Choyke, W. J., Stein, R. and Leibenzeder, S., J. Appl. Phys. 73, p. 3332 (1993)Google Scholar
2. Evwaraye, A. O., Smith, S. R., and Mitchel, W. C., J. Appl. Phys. 79, p. 7726 (1996)Google Scholar
3. Debye, P. P. and Conwell, E. M., Phys. Rev. 93, p. 693 (1954)Google Scholar
4. van Daal, H. J., Greebe, C. A. A. J., Knippenberg, W. F. and Vink, H. J., J. Appl. Phys., 32, p. 2225 (1961)Google Scholar
5. Mott, N. F. and Twose, W. D., Advances In Physics, Vol. 10, ed. Mott, N. F. (London: Taylor and Francis), p. 107 (1961)Google Scholar
6. Evwaraye, A. O., Smith, S. R., Skowronski, M., and Mitchel, W. C., J. Appl. Phys. 74, p. 5269 (1993)Google Scholar
7. Evwaraye, A. O., Smith, S. R. and Mitchel, W. C., J. Appl. Phys. 75, p. 3472 (1994)Google Scholar