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Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

  • Jaime Mimila Arroyo (a1), Michel Barbé (a1), François Jomard (a1), Dominique Ballutaud (a1), Jacques Chevallier (a1), Marie-Antoinette Poisson (a2), Sylvain Delage (a2), Christian Dua (a2), Yvon Cordier (a3), Maxime Hugues (a3), Fabrice Semond (a3), Franck Natali (a3), Philippe Lorenzini (a3) and Jean Massies (a3)...

Abstract

We have studied the influence of a deuterium diffusion on the electrical characteristics of the 2D gas present in AlGaN/GaN heterostructures. The deuterium diffusion is performed by exposing the structures to a rf remote deuterium plasma. We find that both the sheet carrier concentration and the electron mobility decrease and that these effects are partly reversible under thermal annealing. These results suggest that deuterium behave as acceptors in the 2D gas region. The negatively charged deuterium act as additional scattering centers for electrons.

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1 Binari, S.C., Kruppa, W., Dietrich, H.B., Kelner, G., Wickenden, A.E. and Freitas, J.A., Solid State Electron. 41, 1549 (1997).
2 Binari, S.C., Klein, P.B. and Kazior, T.E., Proc. IEEE 90, 1048 (2002).
3 Trassaert, S., Boudart, B., Gaquière, C., Theron, D., Crosnier, Y., Huet, F. and Poisson, M.A., Electron. Lett. 35, 1386 (1999).
4 Greene, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R. and Eastman, L.F., IEEE Electron Device Lett. 21, 268 (2000).
5 Rumyantsev, S.L., Pala, N., Shur, M.S., Borovitskaya, E., Dmitriev, A.P., Levinshtein, M.E., Gaska, R., Khan, M.A., Yang, J., Hu, X. and Simin, G., IEEE Trans. Electron. Devices 48, 530 (2001).
6 Chevallier, J. and Pajot, B., Solid State Phenomena 85-86, 203 (2002).
7 Götz, W., Johnson, N.M., Bour, D.P., McCluskey, M.D. and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996).
8 Hierro, A., Ringel, S.A., Hansen, M., Speck, J.S., Mishra, U.K. and DenBaars, S.P., Appl. Phys. Lett. 77, 1499 (2000).
9 Jung, W.H., Kang, T.W. and Kim, T.W., Jpn. Journ. Appl. Phys. 41, L509 (2002).
10 Neugebauer, J. and Walle, C.G. Van de, Phys. Rev. Lett. 75, 4452 (1995).
11 Cordier, Y., Hughes, M., Lorenzini, P., Semond, F., Natali, F. and Massies, J., Phys. Stat. Sol. (c) (2005) (in press).
12 Gurusinghe, M.N. and Andersson, G., Phys. Rev. B 67, 235208 (2003).
13 Ibbetson, J.P., Fini, P.T., Ness, K.D., DenBaars, S.P., Speck, J.S. and Mishra, U.K., Appl. Phys. Lett. 77, 250 (2000).
14 Jogai, B., J. Appl. Phys. 93, 1631 (2003).

Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

  • Jaime Mimila Arroyo (a1), Michel Barbé (a1), François Jomard (a1), Dominique Ballutaud (a1), Jacques Chevallier (a1), Marie-Antoinette Poisson (a2), Sylvain Delage (a2), Christian Dua (a2), Yvon Cordier (a3), Maxime Hugues (a3), Fabrice Semond (a3), Franck Natali (a3), Philippe Lorenzini (a3) and Jean Massies (a3)...

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