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The Effect of Deposition and Annealing Conditions on the Microstructure of Al-Cu and Al-Cu-Si Thin Films

Published online by Cambridge University Press:  15 February 2011

M. Park ,
S. J. Krause  and
S. R. Wilson
M. Park
Affiliation:
Chemical, Bio and Materials Engineering Dept, Arizona State University, Tempe AZ 85287
S. J. Krause
Affiliation:
Chemical, Bio and Materials Engineering Dept, Arizona State University, Tempe AZ 85287
S. R. Wilson
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, Mesa AZ 85202
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Abstract

The effect of deposition temperature and the addition of Si to sputter deposited Al-Cu thin-film microstructure was studied with transmission electron microscopy. Films were studied in the as-deposited and annealed condition. The effects of thermal treatment were studied with in-situ hot stage microscopy. Al2Cu (θ) precipitated at the grain boundaries and the sublayer interface. At higher deposition temperatures, with alloy composition in single phase region (Al-1.5 wt.%Cu), Al2Cu precipitated during cooldown. At lower temperatures, in the two phase Al-0 region, Al2Cu precipitated during deposition. The addition of Si caused formation of Si precipitates and retarded Al2Cu precipitation during deposition or cooldown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 229: Symposium Q – Structure/Property Relationships for Metal/Metal Interfaces , 1991 , 313
Copyright
Copyright © Materials Research Society 1991

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