Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-17T10:36:46.611Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of CU Intermediate Layer made by IBAD on the CU Surface Film of E–Gun Evaporation

Published online by Cambridge University Press:  25 February 2011

Jie Yang ,
Chen Wang ,
Kun Tao  and
Yudien Fan
Jie Yang
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Chen Wang
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Kun Tao
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Yudien Fan
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Get access

Abstract

Cu intermediate layers (IL) by argon ion beam assisted deposition(IBAD) between substrates and Cu surface films (SF) deposited by electron-gun were made and their effect on the microstructure and properties of the Cu surface films were studied. Primary deposition variables were ion energy and substrates type. Trends in crystallographic texture, crystal-size and resistivity of Cu surface films with different IBAD layers on different substrates are significantly different. Analyzed by RBS, and XRD, the IBAD intermediate layer changed the crystallinity of Cu SF and increased the interface adhesion between the Cu SF and substrate. The experimental results shows that films with lower resistivity and better interface adhesion could be obtained by IBAD- PVD combined technique. The mechanism of crystallographic texture formation is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 763
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

(1) Thomas, P. A., Brodsky, M. H., Kaplan, D., and Lepine, D., Phys. Rev. B. 18, (1978) 3059.Google Scholar
(2) Yehoda, J. E., Yang, B., Vedam, K., and Messier, R, J. Vac. Sci. Technol. A6, (1988)1631.Google Scholar
(3) Rossnagel, S. M. and Cuomo, J. J., MRS Bulletin 10 (1987) 40.Google Scholar
(4) Satou, M., Andoh, Y., Ogata, K., Suzuki, Y., Matsuda, K. and Fujimoto, F., Jan, J. Appl. Phys., 24 (1985) 656.Google Scholar
(5) Netterfield, R. P. et al., Appl. Opt., 24 (1985) 2267.CrossRefGoogle Scholar
(6) Cole, B. E. et al., J. Vac. Sci. Technol., A2 (1984) 327.Google Scholar
(7) Huang, T. C., Lim, G., Parmigiani, F., and Kay, E., J. Vac. Sci. Technol. A3, (1985) 2161.Google Scholar
(8) Baglin, J. E. E. and Clark, G. J., Nucl. Instrum. Meth. Phy. Res., B7 / 8, (1985) 881.Google Scholar
(9) Roy, R. A., Cuomo, J. J., and Yee, D. S., J. Vac. Sci. Technol. A6, May / Jun, (1988) 1621.Google Scholar
(10) Sakai, S., Ogata, K., and Andoh, Y., Nucl. Inst. and Meth. Phy. Res., B59/60, (1991)288.Google Scholar
(11) Masaki, S., Kobayashi, H., and Morisaki, H., Nucl. Inst. and Meth. Phy. Res., B59/60 (1991) 292.Google Scholar
(12) Weaver, C., J. Vac. Sci. Tech. 12(1975) 18.Google Scholar
(13) Hintermann, H. E. Thin Solid Films, 84 (1981) 215 Google Scholar
(14) Eds. Behrisch, R., “Sputtering by Particle Bombardment” I, II, 1981 Google Scholar
(15) Baglin, J. E. E., Pro. of 5th Int. Conf. of IBMM, (Catania, Italy 1986) 107 Google Scholar
(16) Mattox, D. M., J. Vac. Sci. Technol., A 7, (1989) 1105.Google Scholar
(17) Dobrev, D., Pro. The 5th symposium on ion sources and ion assisted technology (1981) 253.Google Scholar