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Effect of Crystallographic Texture on Ferroelectric Performance of PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

G. R. Fox*
Affiliation:
Ramtron International Corporation, Colorado Springs, CO 80921, glen.fox@ramtron.com
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Abstract

A large set of films with textures ranging from almost fully random to highly {111} textured were generated using an ULVAC ZX-1000 production sputter deposition machine. The PZT texture was altered by changing the {111} texture of the underlying Pt electrode, but the PZT thickness, composition, sputter deposition conditions, and crystallization anneals were held constant for all samples. X-ray diffraction peak intensities were used to calculate the volume fraction of {111}, {100}, and randomly oriented material composing the PZT films. All samples contained less than a 6% {100} textured volume fraction. It was found that the switchable polarization is linearly dependent on the {111} textured volume fraction. The voltage required to achieve 90% saturation of the switchable polarization also has a linear dependence on the {111} textured volume fraction. The rate of fatigue and degradation of the switchable polarization caused by same-state and opposite-state retention tests were independent of the {111} textured volume fraction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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