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Effect of Calcination Temperature on Interface Properties Between In2O3 and Au Electrode in Micro Gap Semiconductor Gas Sensors

  • Jun Tamaki (a1), Jun Niimi (a2) and Satoshi Konishi (a3)

Abstract

The In2O3 thin film nanosensors were fabricated by dropping In(OH)3 sol on nano gap electrode with 0.1-2.5 micron of gap size, dried, and calcined at various temperatures. The grain size of In2O3 and thus the number of In2O3 grains were changed by calcining at 600-850 °C. The size of grain was increased from 15 nm at 600 °C to 55 nm at 850 °C, and thus the number of grains in 0.3 micron gap was decreased from 19 to 5.3. Contrary to the expectation, the small resistance changes to both 1 ppm Cl2 (resistance increase) and 0.5 ppm Cl2 (resistance decrease) were obtained for In2O3 nanosensors calcined at 700-850 °C. These were contributed to the changes in the surface and interface chemical state to suppress the adsorption of or substitution with Cl2 molecule.

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1 Tamaki, J., Sensor Letters, 3, 89 (2005).
2 Tamaki, J., MRS Proceedings Volume, 828, 25 (2005).
3 Tamaki, J., Miyaji, A., Makinodan, J., Ogura, S., Konishi, S., Sensors and Actuators B, 108, 202 (2005).
4 Tamaki, J., Niimi, J., Ogura, S., Konishi, S., Sensors and Actuators B, (2006) in press.
5 Tamaki, J., Nishimura, E., Naruo, C., Yamamoto, Y., and Matsuoka, M., Electrochemical Society Proceedings Volume, 2001-18, 480 (2001).
6 Tamaki, J., Naruo, C., Yamamoto, Y., Matsuoka, M., Sensors and Actuators B, 83, 190 (2002).

Keywords

Effect of Calcination Temperature on Interface Properties Between In2O3 and Au Electrode in Micro Gap Semiconductor Gas Sensors

  • Jun Tamaki (a1), Jun Niimi (a2) and Satoshi Konishi (a3)

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