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Effect of Buffer or Barrier Layer on Bistability for Nonvolatile Memory Fabricated with Al Nanocrystals Embedded in α-NPD

  • Sung-ho Seo (a1), Woo-sik Nam (a2), Jae-seok Kim (a3), Chang-hyup Shin (a4), Se-yun Lim (a5), Jea-gun Park (a6) and Yoon-joong Kim (a7)...

Abstract

Recently, low molecular organic non-volatile memories have been developed as a next generation of non-volatile memory because of nano-meter device-feature size and nano-second access and store-time. We developed a non-volatile memory fabricated with the device structure of Al/ α-NPD/Al nano-crystals surrounded by Al2O3/α-NPD/Al, where α-NPD is N,N'-bis(1-naphthyl)-1,1'biphenyl4-4”diamine. One layer of Al nano-crystals with ∼20 nm-width ∼20 nm length was uniform produced between α-NPD layers, confirmed by 1.2MV high voltage transmission-electron-microscope. This device showed Vth of 3.0 V, Vprogram of 4.3 V, and Verase of 6.3 V. Particularly, this device exhibited an excellent non-volatile memory behavior performing the bi-stability (Iprogrm/Ierase) of >1×102, program/erase cycles of >1×105 and multi-levels. In addition, previous reports about low molecular organic non-volatile memories have showed a bad reproducible memory characteristic. However, this issue was completely solved via isolating Al nano-crystals embedded in α-NPD by O2 plasma oxidation. The uniformity of Vth, Vp, and Ve were 9.91%, 6.94% and 7.92%, respectively. Furthermore, the effect of buffer or barrier layer on non-volatile memory characteristics was investigate to examine the control ability for Vth, Vp, and Ve. The 0.5-nm LiF showed a barrier layer behavior suppressing the bi-stability of non-volatile memory. Otherwise, 15-nm CuPc exhibited a buffer layer behavior enhancing the bi-stability of nonvolatile memory.

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1. Ma, L. P., Liu, J., and Yang, Y., Appl. Phys. Lett. 80, 2997 (2002).
2. Ma, L., Pyo, S., Ouyang, J., Xu, Q., and Yang, Y., Appl. Phys. Lett. 82, 1419 (2003).
3. Bozano, L. D., Kean, B. W., Deline, V. R., Salem, J. R., and Scott, J. C., Appl. Phys. Lett. 84, 607 (2004).
4. Park, J. G. Lee, G. S., Chae, K. S., Kim, Y. J., and Miyata, T., Korean Phys. Soc. 48, 1505 (2006).
5. Bozano, L. D., Kean, B. W., Beinhoff, M., Carter, K. R., Rice, P. M., and Scott, J. C., Adv. Funct. Mater. 15, 1933 (2005).
6. Simmons, J.G. and Verderber, R. R., Proc. Roy. Soc. A, 301, 102 (1967).

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