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Effect of Atomic Structure at the Epitaxial CaF2 /Si(111) Interface on Electrical Properties

  • J.L. Batstone (a1), Julia M. Phillips (a1) and E.C. Hunke (a1)

Abstract

High resolution electron microscopy has been used to determine the atomic structure at the epitaxial CaF2 /Si(111) interface before and after a rapid thermal anneal. Direct Ca-Si bonding at the interface, with 8-fold coordinated Ca atoms is observed in as-grown layers. Fluorine is preferentially removed from the interface during a rapid thermal anneal leaving 5-fold coordinated Ca atoms. A dramatic improvement in the electrical properties of the interface is observed after annealing. The measured interface state density is reduced from ≳1013 cm−2 to ≲1011cm−2. This has been correlated with the removal of F from the interface. No evidence for direct F-Si bonding is observed.

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[1] See for example, Phillips, J.M., Mat. Res. Soc. Symp. Proc. 71, 97, (1986); H. Ishiwara, T. Asano, H.C. Lee, Y. Kuriyama, K. Seki and S. Furukawa, Mat. Res. Soc. Symp. Proc. 67, 105, (1986); L.J. Schowalter and R.W. Fathauer, J. Vac. Sci. Tech. A 4, 1026, (1986)
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[4] AG Heatpulse 210, AG Associates, Inc., Palo Alto, CA 94303
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[13] A description of the coincidence site lattice can be found in “Introduction to Materials Science”, Guy, A.G. (McGraw-Hill, Inc, 1971)
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