Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-25T12:29:58.032Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Ar Sputtering Pretreatment on the Electromigration Resistance in Al-Cu/TiN/Ti Interconnects

Published online by Cambridge University Press:  10 February 2011

L.P. Wang ,
A. Chuang ,
L.T. Lin ,
F.S. Huang ,
K. Perng  and
J. Hwang
L.P. Wang
Affiliation:
Dept. of Materials Science and Engineering, Tsing Hua University, Hsin-Chu, Taiwan, R.O.C
A. Chuang
Affiliation:
Dept. of Electrical Engineering, Tsing Hua University, Hsin-Chu, Taiwan, R.O.C
L.T. Lin
Affiliation:
Dept. of Electrical Engineering, Tsing Hua University, Hsin-Chu, Taiwan, R.O.C
F.S. Huang
Affiliation:
Dept. of Electrical Engineering, Tsing Hua University, Hsin-Chu, Taiwan, R.O.C
K. Perng
Affiliation:
Dept. of Materials Science and Engineering, Tsing Hua University, Hsin-Chu, Taiwan, R.O.C
J. Hwang
Affiliation:
Dept. of Materials Science and Engineering, Tsing Hua University, Hsin-Chu, Taiwan, R.O.C
Get access

Abstract

The 1 µm-wide Al-0.5wt%Cu/TiN/Ti interconnect, on the oxidized Si(100) wafer without Al sputtering pretreatment on the SiO2 surface prior to Ti deposition, failed after stressing with a current density of 1 × 106 A/cm2 for 190 hr at 175°C. In contrast, the interconnect with Ar sputtering pretreatment did not fail after stressing under the same condition for 550 hr. X-ray diffraction spectra indicated that the Ar sputtering pretreatment lowered Al(111) peak intensity down to 1/46 of its magnitude. This result suggests that the improvement of electromigration resistance by Ar sputtering pretreatment is not due to Al(111) texture, which is opposite to the result of Shibata et al. (Jpn. J. Appl. 32, 4479 (1993)). The elemental concentration distribution in depth was characterized on Al-Cu/TiN/Ti multilayers with and without Ar sputtering pretreatment by using secondary ion mass spectroscopy and Auger electron microscopy. A fairly large amount of oxygen and nitrogen was found to segregate near the Al-Cu/TiN interface. The phenomenon associated with the large amount of segregated oxygen and nitrogen is attributed to the enhancement of electromigration resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 103
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. d'Hurle, F.M., and Ho, P.S., in Thin Films -Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N. and Mayer, J.W. (Wiley, New York 1978), pp. 243–303.Google Scholar
2. Attardo, M.J. and Rosenberg, R., J. Appl. Phys. 41, 2381 (1970).10.1063/1.1659233Google Scholar
3. Vaidya, S. and Ainha, A.K., Thin Solid Films 75, 253 (1981).Google Scholar
4. Knorr, D.B., Tracy, D.P. and Rodbell, K.P., Appl. Phys. Lett. 59, 3241 (1991).Google Scholar
5. Campbell, A. N., Mikawa, R.E., and Knorr, D.B., J. Electron. Mater. 22, 589 (1993).10.1007/BF02666403Google Scholar
6. Ting, L. M. and Hong, Q., Mat. Res. Soc. Symp. 428, pp 75 (1996).Google Scholar
7. Shibata, H., Murota, M. and Hashimoto, K., Jpn. J. Appl. 32, 4479 (1993).Google Scholar
8. Kageyama, M., Harshimoto, K. and Onoda, H., IEEE/IRPS Proc., 97 (1991).Google Scholar
9. Rodbell, K.P., Knorr, D.B. and Tracy, D.P., Mat. Res. Soc. Symp. 265, pp 107 (1992).Google Scholar
10. Shibata, H., Ikeda, N., Murota, M., Asahi, Y. and Harshimoto, K., VLSI Tech. Symp. Dig., 33 (1991).Google Scholar
11. van der Kolk, G.J., Verkerk, M.J. and Brankaert, W.A.M.C., Semicond. International 1998 (May), 224 (1988).Google Scholar
12. Adamik, M., Barna, P.B., Tomov, I., and Biro, D., Phys. Stat. Sol. A 145, 275 (1994).Google Scholar
13. Bhatt, H.J., Appl. Phys. Lett. 19, 30(1971).Google Scholar
14. Gangulee, A., d'Heurle, F.M., Ranieri, V.A., and Fiorio, R.A., J. Vac. Sci. Technol. 16, 156 (1979).Google Scholar