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Effect of Annealing Treatment on PZT Thin Fiilm Properties Using Oxygen 18 Depth Profiling Technique

Published online by Cambridge University Press:  10 February 2011

F. Ayguavives ,
B. Ea-Kim ,
B. Agius ,
I. Vickridge  and
A. I. Kingon
F. Ayguavives
Affiliation:
Laboratoire Charles Fabry (IOTA), Groupe “Physique des couches minces”, Centre universitaire BP 147, 91403 ORSA Y Cedex, France e-mail.: tito@iut-orsay.fr Laboratoire Charles Fabry (IOTA), Groupe “Physique des couches minces”, Centre universitaire BP 147, 91403 ORSA Y Cedex, France
B. Ea-Kim
Affiliation:
Laboratoire Charles Fabry (IOTA), Groupe “Physique des couches minces”, Centre universitaire BP 147, 91403 ORSA Y Cedex, France
B. Agius
Affiliation:
Laboratoire Charles Fabry (IOTA), Groupe “Physique des couches minces”, Centre universitaire BP 147, 91403 ORSA Y Cedex, France
I. Vickridge
Affiliation:
Groupe de Physique des Solides, Université Paris VII et VI, Paris, France
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
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Abstract

Lead zirconate titanate (PZT) thin films have been deposited in a reactive argon/oxygen gas mixture from a metallic target of nominal composition Pb1.1(Zr0.4Ti0.6)O3 by rf magnetron sputtering on Si substrates and RuO2/SiO2/Si structures. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements clearly show a correlation between the evolution of characteristic atomic emission line intensities and the thin film composition determined by simultaneous Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). As a result, the cathode surface state can be monitored by OES to ensure a good compositional transferability from the target to the film and reproducibility of thin film properties for given values of deposition parameters. Electrical properties and crystallization have been optimized with a 90 nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550°C) are fatigue-free and show very low leakage currents (J=2.10−8 A/cm2 at 1 V). The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using 18O as a tracer, to study the oxygen vacancy migration which plays a key role in fatigue, leakage current, and electrical degradation/breakdown in PZT thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 393
Copyright
Copyright © Materials Research Society 1999

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References

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