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The Effect of Annealing Temperature on the Morphology of Stacking Faults in Czochralski Silicon

  • R. F. Pinizzotto (a1) and H. F. Schaake (a1)

Abstract

Nucleation and growth of stacking faults formed in CZ silicon during oxygen precipitation have been studied using x-ray topography, TEM and FTIR. Samples were annealed in argon for various times at 550°C and 750°C followed by a 16 hour anneal in dry oxygen at 1000°C. In samples annealed at 550°C, the stacking faults were several layers thick with colonies of precipitates at their centers. The faults in samples annealed at 750°C contained only one particle and were single in nature. It is proposed that the faults are formed by thin oxygen precipitate platelets and that the different morphologies are due to different oxygen precipitation rates. The platelets are probably a modified cristobalite, as determined by micro-diffraction results.

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1. Patel, J. R., Jackson, K. A. and Reiss, H., J. Appl. Phys., 48, 5279 (1977).
2. Patrick, W., Hearn, E., Westdorp, W. and Bohg, A., J. Appl. Phys., 50, 7156 (1979).
3. Kaiser, W. and Keck, P. H., J. Appl. Phus., 28, 882 (1957).

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