Hostname: page-component-7bb8b95d7b-pwrkn Total loading time: 0 Render date: 2024-09-24T07:49:30.746Z Has data issue: false hasContentIssue false

The Effect of Annealing on NiFe/FeMn Thin Film Couples

Published online by Cambridge University Press:  15 February 2011

Cherngye Hwang
Affiliation:
IBM Corporation, Storage Systems Products Division, San Jose, CA 95193
Michael A. Parker
Affiliation:
IBM Corporation, Storage Systems Products Division, San Jose, CA 95193
J. Kent Howard
Affiliation:
IBM Corporation, Storage Systems Products Division, San Jose, CA 95193
Get access

Abstract

The antiferromagnctic FeMn thin film has been used to stabilize the domains in NiFe films by exchange-coupling, thus eliminating the Barkhauscn noise in magnetoresistive sensor designs. T'he strength of this exchange-coupling is highly dependent on the interfacial structure, as well as the interfacial composition of this NiFe/FeMn thin film couple. We have conducted isothermal, as well as isochronal anneals of NiFe/FeMn thin film couples, and monitored their magnetic properties, in particular the strength of their exchange-coupling. The strength of exchange-coupling, measured by the shift of the B-H loop obtained from a hysteresis loop tracer, increased monotonically with annealing time for isothermal anneals between 200 and 300 °C. At higher temperatures (up to 500°C), the interdiffusion between the two layers is so extensive that the NiFe layer loses its sort-magnetic properties and the coupling strength is degraded. Composition depth-profiling by scanning Auger analysis was conducted to study the interdiffusion profiles of the annealed samples. Cross-section transmission electron microscopy (XTEM) was used to study the microstructure, crystallography, and composition of these thin films after annealing. Micro-beam composition analysis was also carried out and the compositional profile obtained was compared to the Auger depth-profile results. Transmitted electron diffraction using selected area electron diffraction (SAED) and elongated probe micro-diffraction (EPMD) of XTEM samples was used to study the crystallography of these films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsang, C. and Decker, S.K., JAP. 52(3) 24652467 (1981).Google Scholar
2. Bajorek, C.H. and Thompson, D.A., IEEE Trans. on Mag., Mag-11, 5, 12091211 (1975).CrossRefGoogle Scholar
3. Tsang, C. and Fontana, R.E., IEEE Trans. on Mag., Mag-18, 6, 11491151, (1982).CrossRefGoogle Scholar
4. Tsang, C., Heiman, N. and Lee, K., JAP, 52(3) 24712473 (1981).Google Scholar
5. Hempstead, R.D., Krongelb, S. and Thompson, D.A., IEEE Trans. on Mag., Mag-14, 5, 521523, (1978).CrossRefGoogle Scholar
6. Tsang, C. and Lce, K., JAP. 53(3), 26052607 (1982).Google Scholar
7. Layadi, A., Lee, J.W. and Artman, J.O., JAP, 63(8) 38083810 (1987).Google Scholar
8..Kouvcl, J.S., J. Phys. Chem., 16, 152157 (1960).Google Scholar
9. Menshikov, A.Z., Burlet, P., Cheamberod, A. and Tholence, J.L., Solid State Comm.,39, 10931095 (1981).CrossRefGoogle Scholar
10. Hwang, C., Gciss, R.H. and Howard, J.K., JAP, 64(10) 61156117 (1988).Google Scholar
11. Parker, M. A., Johnson, K. E., Hwang, C., and Bermea, A., EMSA Proc., in press, (1991).Google Scholar