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The Effect of Amorphous Silicon Layer in Pe-Cvd Titanium Polycide Gate Dielectrics

Published online by Cambridge University Press:  25 February 2011

Shih-Chang Chen ,
Akihiro Sakamoto ,
Hiroyuki Tamura ,
Masaki Yoshimaru  and
Masayoshi Ino
Shih-Chang Chen
Affiliation:
OKI Electric Industry Co. Ltd., VLSI R&D Center 550–1, Higashiasakawa, Hachioji, Tokyo, Japan 193
Akihiro Sakamoto
Affiliation:
OKI Electric Industry Co. Ltd., VLSI R&D Center 550–1, Higashiasakawa, Hachioji, Tokyo, Japan 193
Hiroyuki Tamura
Affiliation:
OKI Electric Industry Co. Ltd., VLSI R&D Center 550–1, Higashiasakawa, Hachioji, Tokyo, Japan 193
Masaki Yoshimaru
Affiliation:
OKI Electric Industry Co. Ltd., VLSI R&D Center 550–1, Higashiasakawa, Hachioji, Tokyo, Japan 193
Masayoshi Ino
Affiliation:
OKI Electric Industry Co. Ltd., VLSI R&D Center 550–1, Higashiasakawa, Hachioji, Tokyo, Japan 193
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Abstract

Titanium silicide (TiSix), used as polycide gate consists of TiSi1.1 and amorphous silicon (a-Si), was deposited by Plasma Enhanced Chemical Vapor Deposition method (PE-CVD). The effect of a-Si layer in PE-CVD Ti polycide gate dielectrics has been studied. In order to evaluate the a-Si layer effect, three types of samples were prepared on gate SiO2 film with following structures : a) a-Si / TiSi-1.1 / a-Si / phosphorus (P) doped poly-Si, b) a-Si / TiSi-1.1 / non-doped poly-Si / P doped poly-Si and c) a-Si / TiSi1.1 / P doped poly-Si, respectively. Furthermore, in order to avoid the influence of native oxide existence at the interface, the pre-cleaning treatment was performed in-situ on the poly-Si film surface before TiSi1.1 film deposition. The gate dielectric strengths of these samples indicate that the gate dielectric degradation in PE-CVD Ti polycide gate is greatly dependent on Si under layer crystallization. It is effective using a-Si film as the under layer in decreasing the gate dielectric degradation . This is due to the Ti oxide interlayer, formed at the interface of TiSi2.0 and poly-Si films, which restrains the TiSix local penetration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 179
Copyright
Copyright © Materials Research Society 1990

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References

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