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Effect of Ambient Gas Pressure on Pulsed Laser Ablation Plume Dynamics and Znte Film Growth

  • CM. Rouleau (a1), D.H. Lowndes (a1), M.A. Strauss (a2), S. Cao (a2), A.J. Pedraza (a2), D.B. Geohegan (a1), A.A. Puretzky (a3) and L.F. Allard (a4)...

Abstract

Epitaxial thin films of nitrogen-doped p-ZnTe were grown on single-crystal, semi-insulating GaAs substrates via pulsed laser ablation of a stoichiometric ZnTe target. Both low pressure nitrogen ambients and high vacuum were used. Results of in situ reflection high energy electron diffraction (RHEED) and time-resolved ion probe measurements have been compared with ex situ Hall effect and transmission electron microscopy (TEM) measurements. A strong correlation was observed between the nature of the film's surface during growth (2-D vs. 3-D, assessed via RHEED) and the ambient gas pressures employed during deposition. The extended defect content (assessed via cross-sectional TEM) in the region >150 nm from the film/substrate interface was found to increase with the ambient gas pressure during deposition, which could not be explained by lattice mismatch alone. At sufficiently high pressures, misoriented, columnar grains developed which were not only consistent with the RHEED observations but also were correlated with a marked decrease in Hall mobility and a slight decrease in hole concentration. Ion probe measurements, which monitored the attenuation and slowing of the ion current arriving at the substrate surface, indicated that for increasing nitrogen pressure the fast (vacuum) velocity-distribution splits into a distinct fast and two collisionally-slowed components or modes. Gas-controlled variations in these components mirrored trends in electrical properties and microstructural measurements.

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1 Roy, D. and Krupanidhi, S.B., J. Mater. Res. 7, 2521 (1992).
2 Kim, H.S. and Kwok, H.S., Appl. Phys. Lett. 61, 2234 (1992).
3 Casero, R. P., Kerherve, F., Enard, J.P. and Perrière, J., Applied Surface Science 54, 147 (1992).
4 Foote, M.C., Jones, B.B., Hunt, B.D., Banier, J.B., Vasquez, R.P. and Bajuk, L.J., Physica C 201, 176 (1992).
5 Lee, J., Narumi, E., Li, C., Patel, S. and Shaw, D.T., Physica C 200, 235 (1992).
6 Shen, W.P and Kwok, H.S., in Compound Semiconductor Epitaxy MRS symposium proceedings V340, edited by Tu, C.W., Kolodziejski, L.A. and McCrary, V.R., (MRS, Pittsburgh, PA, 1994), p 457.
7 McCamy, J.W. and Lowndes, D.H., Appl. Phys. Lett. 63, 3008 (1993).
8 Chem, M.Y., Lin, H.M., Fang, C.C., Fan, J.C. and Chen, Y.F., Appl. Phys. Lett. 67, 1390 (1995).
9 Shen, W.P. and Kwok, H.S., Appl. Phys. Lett. 65, 2162 (1994).
10 Rouleau, CM., Lowndes, D.H., McCamy, J.W.. Budai, J.D., Poker, D.B., Geohegan, D.B., Puretzky, A.A. and Zhu, S., Appl. Phys. Lett. 67, 2545 (1995).
11 Shen, W.P. and Kwok, H.S., in Film Synthesis and Growth Using Energetic Beams MRS symposium proceedings V388, edited by Atwater, H.A., Dickinson, J.T., Lowndes, D.H. and Polman, A., (MRS, Pittsburgh, PA 1995), p 91.
12 Lowndes, D.H., Rouleau, CM., McCamy, J.W., Budai, J.D., Poker, D.B., Geohegan, D.B., Puretzky, A.A. and Zhu, S., in Film Synthesis and Growth Using Energetic Beams MRS symposium proceedings V388, edited by Atwater, H.A., Dickinson, J.T., Lowndes, D.H. and Polman, A., (MRS, Pittsburgh, PA, 1995), p. 85.
13 Uchiki, H., Machida, O., Tanaka, A. and Hirasawa, H., Jpn. J. Appl. Phys. 32, L764 (1993).
14 Ahmed, E., Hill, A.E., Leppavuori, J., Pilkington, R.D., Tomlinson, R.D., Levoska, J. and Kusmartseva, O., Adv. Materials for Optics and Elect. 4, 423 (1994).
15 Schaffler, R., Klose, M., Brieger, M., Dittrich, H. and Schock, H.W., Materials Sci. Forum 173174, 135 (1995).
16 Levoska, J., Hill, A.E., Leppavuori, S., Kusmartseva, O., Tomlinson, R.D. and Pilkington, R.D., Jpn. J. Appl. Phys. 32, 43 (193).
17 Gremenok, V.F., Zaretskava, E.P., Bodnar, I.V. and Victorov, I.A., Jpn. J. Appl. Phys. 32, 90 (1993).
18 Levoska, J., Leppavuori, S., Wang, F., Kusmartseva, O., Hill, A.E., Ahmed, E., Tomlinson, R.D. and Pilkington, R.D., Physica Scripta T54, 244 (1994).
19 Hill, A.E., Leppavuori, S., Tomlinson, R.D., Pilkington, R.D., Levoska, J., Ahmed, E., Frantti, J., in Laser Ablation in Materials Processing: Fundamentals and Applications MRS symposium proceedings V285, edited by Braren, B., Dubowski, J.J. and Norton, D.P., (MRS, Pittsburgh, PA 1993), p. 483.
20 Uchiki, H., Hirasawa, H. and Hasegawa, I., Jpn. J. Appl. Phys. 33, L983 (1994).
21 Feiler, D. and Williams, R. S., Appl. Phys. Lett., submitted for publication.
22 Feiler, D., Williams, R.S., Talin, A.A., Yoon, H. and Goorsky, M.S., J. Cryst. Growth, submitted for publication.
23 Lowndes, D.H., Rouleau, CM., Geohegan, D.B., Puretzky, A.A., Strauss, M.A., Pedraza, A.J., Park, J.W., Budai, J.D. and Poker, D.B., Pulsed Laser Ablation Growth and Doping of Epitaxial Compound Semiconductor Films, these proceedings.
24 Geohegan, D.B., in Laser Ablation: Mechanisms and Applications, edited by Miller, J.C. and Haglund, R.F., (Springer-Verlag, Heodelberg, 1991), p. 28.
25 Geohegan, D.B., in Pulsed Laser Deposition of Thin Films, edited by Chrisley, D.B. and Hubler, G.K., (Wiley, New York, 1994), chap 5.
26 Geohegan, D.B., Thin Solid Films 220, 138 (1992).
27 Geohegan, D.B., in Laser Ablation of Electronic Materials: Basic Mechanisms and Applications, edited by Fogarassy, E. and Lazare, S., (North Holland, Amsterdam, 1992), p. 73.

Effect of Ambient Gas Pressure on Pulsed Laser Ablation Plume Dynamics and Znte Film Growth

  • CM. Rouleau (a1), D.H. Lowndes (a1), M.A. Strauss (a2), S. Cao (a2), A.J. Pedraza (a2), D.B. Geohegan (a1), A.A. Puretzky (a3) and L.F. Allard (a4)...

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