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Effect of a Titanium Interlayer on the Performance of the Titanium Nitride Diffusion Barrier

Published online by Cambridge University Press:  10 February 2011

K. Y Lu  and
J. S. Chen
K. Y Lu
Affiliation:
National Cheng Kung University, Dept. Materials Science and Engineering Tainan, Taiwan
J. S. Chen
Affiliation:
National Cheng Kung University, Dept. Materials Science and Engineering Tainan, Taiwan
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Abstract

We have studied the effect of a Ti interlayer on the behavior of a TiN diffusion barrier for Al and Cu metallizations. Thermal stability of Al/Ti/TiN/<Si> and Al/TiN/<Si> samples annealed at 400–600°C for 30 min was investigated using Auger electron spectroscopy (AES), glancing angle X-ray diffraction and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.

After annealing at 400°C and 500°C, the AI/TiN/<Si> samples exhibited the same sheet resistance as the as-deposited one, while the sheet resistances of the Al/Ti/TiN/<Si> samples increased upon annealing. After annealing at 600°C, pyramidal pits developed on the surface of the Al/TiN/<Si> sample, but not on the Al/Ti/TiN/<Si> sample. Sheet resistance measurements for the 600°C-annealed Al/TiN/<Si> sample resulted in a more scattered distribution and a higher average value than for the Al/Ti/TiN/<Si> sample. The results clearly indicate that the performance of the TiN barrier layer is significantly improved by including a thin Ti film between the TiN and the Al. The Ti interlayer also improves the TiN barrier performance for the Cu metallization system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 21
Copyright
Copyright © Materials Research Society 1999

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