Skip to main content Accessibility help

ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

  • J. C. Barbour (a1), M. L. Lovejoy (a1), C. I. H. Ashby (a1), A. J. Howard (a1), J. S. Custer (a1) and R. J. Shul (a1)...


The growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.



Hide All
1 Wagner, J. F. and Wilmsen, C. W., in Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by Wilmsen, C. W. (Plenum Press, New York, 1985), pp. 168184.
2 Barbour, J. C., Stein, H. J., and Outten, C. A., in Low Energy Ion Beam and Plasma Modification of Materials, edited by Harper, J. M. E., Miyake, K., McNeil, J. R., and Gorbatkin, S. M. (Mater. Res. Soc. Proc. 223, Pittsburgh, PA, 1991), p. 91.
3 Barbour, J. C., Casalnuovo, S. A., and Kurtz, S. R., in Amorphous Insulating Thin Films, edited by Kanicki, J., Warren, W. L., Devine, R. A. B., and Matsumura, M. (Mater. Res. Soc. Proc. 284, Pittsburgh, PA, 1993), p. 613.
4 EerNisse, E. P., J. Appl. Phys. 48, 3337 (1977).
5 Outten, C. A., Barbour, J. C., and Wampler, W. R., J. Vac. Sci. Technol. A, 9, 717 (1991).
6 Brenner, A. and Senderoff, S., J. Res. Nat. Bur. Stand. (U.S.) 42, 105 (1949).
7 Brantley, W. A., J. Appl. Phys. 44, 534 (1973).
8 Claassen, W. A. P., Valkenburg, W. G. J. N., Willemsen, M. F. C., and Wijgert, W. M. v. d., J. Electrochem. Soc. 132, 893 (1985).
9 Brice, D. K., Nucl. Instrum. and Methods B, 44, 302 (1990).
10 Barbour, J. C., Doyle, B. L. and Stein, H. J., Appl. Phys. Letts., submitted.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed