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Ebic/Tem Investigation of Defects in Solar Cell Silicon

  • Dieter G. Ast (a1), Brian Cunningham (a1) and Horst Strunk (a1)


Two examples are given of the application of EBIC and HVTEM to the study of defects in silicon.

An hexagonal dislocation network in a coherent first order twin boundary in WEB silicon shows a three fold symmetry when imaged by EBIC. The observed variation of the minority carrier lifetime at the nodes is consistent with a model which assumes that jogs are particularly strong recombination sites at a dislocation.

EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found i) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and ii) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.



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1. Heydenreich, J., Blumtritt, H., Gleichmann, R. and Johansen, H., J. de Physique, Supplement C–6 (1979) p. 23
2. Strunk, H. and Ast, D. G., 38th Ann.Proc.Electron.Microscopy.Soc.Amer., Bailey, E. W. (ed), San Francisco, CA (1980) p. 322
3. Donolato, C., Appl.Phys.Let. 34 (1979) p.80; Optik 52 (1979/80) p.19; Solid State Elctronics 22 (1979) 797
4. Leamy, H. J., Kimerling, L. C. and Ferris, S. D., Scanning Electron Microscopy, Vol.1 (SEM Inc.,AMP O'Hare, II 6066, USA, 1978) p. 717
5. Kimmerling, L. C., Leamy, H. J. and Patel, J. R., Appl.Phys.Lett, 30 (1977) p.217
6. Hanoka, J. F. and Bell, R. O., Ann.Rev.Material.Sci. (1981) p. 353
7. Ioannou, D. E., J.Phys.D 13 (1980) p. 611
8. Fujuki, T. and Matsunami, H., Jap.J.Appl.Phys. 20 (1981) p.745;
J.Appl. Phys. 52 (1981) p. 3428
9. Foell, H. and Ast, D. G., TEM and EBIC Observations on EFG, JPL/DOE Report No. 954852–1 (1978)
10. Strunk, H., Cunningham, B. and Ast, D. G., Defect Structure of EFG Silicon, JPL/DOE Report No. 954852–6 (1980)
11. Booker, G. R., Ourmazd, A. and Darby, D. B., J. de Physique, Supplement No C–6, (1979) p.19
12. Foell, H. and Ast, D. G., Phil.Mag. A, 40 (1979)589
13. Cunningham, B., Strunk, H. and Ast, D. G., Defect Structure of WEB Silicon, JPL/DOE Report No 954852–5 (1980);
To be published by Elctrochem, J.. Soc. Am.
14. Hirth, J.P. and Lothe, J., Theory of Dislocations, (McGraw Hill, New York 1968)
15. Carter, C. B. and Foell, H., Report No 4280, Material Science Center, Cornell University, July 1980;
Dislocation Modelling of Physical Systems, Eds. Ashby, M. F., Bullough, R., Hartley, C. S. and Hirth, J. P., (Pergamon, Oxford, 1980) p.554
17. Hirsch, P. B., J. de Physique, Supplement C–6, (1979) p.27
18. Cunningham, B., Strunk, H. and Ast, D. G., submitted to Appl.Phys.Lett.
19. Rhoderick, E.H., Metal Semiconductor Contacts, (Oxford University Press 1980)
20. Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Appl.Phys.Lett. 38(1981) p.900
21. Goesele, U. and Strunk, H., Appl.Phys. 20(1979)p.265;
Strunk, H., Goesele, U. and Kolbesen, B. O., J. Microscopy 118(1980)p.35
22. Queisser, H. J., Shockely Transistor Corp. Final Report, Contract AF30(602) 2556,1963.
23. Hopkins, R. H., Davis, J. R., Rohatgi, A., Campbell, R. B., Blais, P. D., Rai-Choudhury, P., Stapelton, R. E., Mollenkopf, H. C. and Cormick, J. R. Mc., Effects of Impurities and Processing on Silicon Solar Cells, DOE/JPL Report No. 954331–9, Vol.2 (1980).

Ebic/Tem Investigation of Defects in Solar Cell Silicon

  • Dieter G. Ast (a1), Brian Cunningham (a1) and Horst Strunk (a1)


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