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Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon

  • Gottlieb S. Oehrlein (a1) and James W. Corbett (a2)

Abstract

Our knowledge of phenomena connected to the early stages of oxygen clusters, especially their electrical activity is reviewed. In addition to the well-known 450°C thermal donors, 'new oxygen donors', which occur in ca. 650°C annealing, have emerged in conjunction with low temperature processing for VLSI and are discussed. The existing models of thermal donors are reviewed. In a new model of thermal donor formation, thermal donors are viewed as metastable oxygen clusters which lower the compressive strain of the surrounding silicon matrix via bonding of 2p oxygen lone pair orbitals. It is shown how this bonding can result in shallow double donor states.

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Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon

  • Gottlieb S. Oehrlein (a1) and James W. Corbett (a2)

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