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The Early Oxynitridation Stages of Hydrogen-Terminated Single-Crystalline Silicon in N2O Ambient

Published online by Cambridge University Press:  17 March 2011

G. F. Cerofolini ,
M. Camalleri ,
G. G. Condorelli ,
I. L. Fragalà ,
C. Galati ,
S. Lorenti ,
L. Renna  and
O. Viscuso
G. F. Cerofolini
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
M. Camalleri
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
G. G. Condorelli
Affiliation:
Department of Chemistry, University of Catania, 95100 Catania CT, Italy
I. L. Fragalà
Affiliation:
Department of Chemistry, University of Catania, 95100 Catania CT, Italy
C. Galati
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
S. Lorenti
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
L. Renna
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
O. Viscuso
Affiliation:
STMicroelectronics, Stradale Primosole 50, 95100 Catania CT, Italy
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Abstract

Oxynitridation of hydrogen-terminated silicon with N2O has been studied by x-ray photoemission spectroscopy. Our analysis has given evidence that the broad N(1s) peak at 398.3 eV usually reported in the literature is preceded by the formation of a very narrow peak at 397.3 eV, attributed to the moiety Si3N in which nitrogen is only marginally oxidized, and two other peaks (previously never reported) at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P6.4
Copyright
Copyright © Materials Research Society 2001

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