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Dynamic Measurements of MEMS-Based Field Effect Transistors Using Scanning Capacitance Microscopy

Published online by Cambridge University Press:  01 February 2011

Meredith L. Anderson ,
R.W. Young  and
C.Y. Nakakura
Meredith L. Anderson
Affiliation:
cynakak@sandia.gov, Sandia National Laboratories, Microelectronics Development Laboratory, 1515 Eubank Blvd. SE, MS 1077, Albuquerque, NM, 87112, United States, 505 284-3262, 505 844-7833
R.W. Young
Affiliation:
rwyoung@sandia.gov, Sandia National Laboratories, Microelectronics Development Laboratory, Albuquerque, NM, 87112, United States
C.Y. Nakakura
Affiliation:
cynakak@sandia.gov, Sandia National Laboratories, Microelectronics Development Laboratory, Albuquerque, NM, 87112, United States
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Abstract

In this research, we have employed scanning capacitance microscopy (SCM) to image 2D carrier profiles of a MEMS device. Multiple device states are exercised and examined for changes in carrier response as a function of applied bias. First, experimental and simulated dopant profiles of the source and drain pn junctions were measured with device contacts grounded. Their comparison revealed good agreement. Scanning capacitance microscopy was then used to image changes in carrier distribution within the channel of the device while independent bias voltages were applied to the source, gate, drain, and well regions. Device operation was confirmed by simultaneously measuring the drain current. The SCM image contrast directly beneath the gate was observed to change as a function of applied gate bias voltage.

Keywords

devicesmicroelectro-mechanical (MEMS)dopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A20-03
Copyright
Copyright © Materials Research Society 2006

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