A Dual-RF-Plasma Approach for Controlling the Graphitic Order and Diameters of Vertically-Aligned Multiwall Carbon Nanotubes
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- DOI: https://doi.org/10.1557/PROC-858-HH3.11
- Published online by Cambridge University Press: 01 February 2011
Abstract
Plasma enhanced chemical vapor deposition (PECVD) is a unique technique for growing vertically-aligned multiwall carbon nanotubes (VA-MWNTs) at controllable tube densities. This technique is of considerable importance for low temperature growth of VA-MWNTs at desired locations. However, the graphitic order of these MWNTs is inferior to those grown by laser ablation, arc discharge, and thermal CVD techniques. Previously, these VA-MWNTs were grown by a one-plasma approach (DC, microwave etc), either for gas decomposition or substrate biasing. Here, we describe a dual-RF plasma enhanced CVD (dual-RF-PECVD) technique that offers unique capability for controlling the graphitic order and diameters of VA-MWNTs.
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A Dual-RF-Plasma Approach for Controlling the Graphitic Order and Diameters of Vertically-Aligned Multiwall Carbon Nanotubes
-
- DOI: https://doi.org/10.1557/PROC-858-HH3.11
- Published online by Cambridge University Press: 01 February 2011