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A Dual-RF-Plasma Approach for Controlling the Graphitic Order and Diameters of Vertically-Aligned Multiwall Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

Jitendra Menda
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Lakshman Kumar Vanga
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Benjamin Ulmen
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Yoke Khin Yap*
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
Zhengwei Pan
Affiliation:
Department of Materials Science and Engineering, University of Tennessee
Ilia N. Ivanov
Affiliation:
Department of Materials Science and Engineering, University of Tennessee
Alex A. Puretzky
Affiliation:
Department of Materials Science and Engineering, University of Tennessee
David B. Geohegan
Affiliation:
Condensed Matter Sciences Division, Oak Ridge National Laboratory
*
* Email: ykyap@mtu.edu
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Abstract

Plasma enhanced chemical vapor deposition (PECVD) is a unique technique for growing vertically-aligned multiwall carbon nanotubes (VA-MWNTs) at controllable tube densities. This technique is of considerable importance for low temperature growth of VA-MWNTs at desired locations. However, the graphitic order of these MWNTs is inferior to those grown by laser ablation, arc discharge, and thermal CVD techniques. Previously, these VA-MWNTs were grown by a one-plasma approach (DC, microwave etc), either for gas decomposition or substrate biasing. Here, we describe a dual-RF plasma enhanced CVD (dual-RF-PECVD) technique that offers unique capability for controlling the graphitic order and diameters of VA-MWNTs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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