Experiments have been performed to assess the feasibility of using ionbeam sputter deposition for the growth of CdTe, HgTe and HgCdTe films. Some simple cryogenically cooled dual-target configurations have been employed in an investigation of epitaxial growth on CdTe substrates. Good-quality epitaxy was achieved for CdTe at temperatures down to 140°C, and for HgTe and HgCdTe at temperatures extending to below 50° C.Based upon compositional and phase analyses, and upon IR absorption measurements, we conclude that, using an excess Hg flux, stoichiometric transfer of the HgCdTe target composition to the substrate is approximately obtained. However, some departure from stoichiometry is produced at higher substrate temperatures (> 150”C) due to thermal re-evaporation of Hg, and under high sputtered Hg fluxes due to selective re-sputtering of HgTe. The good structural quality and excellent compositional uniformity of the films indicate that ion-beam sputter deposition may be suitable for low-temperature processing of IR detector structures.