Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-24T23:33:20.759Z Has data issue: false hasContentIssue false
  • English
  • Français

Dual Damascene Process for FatWires in Copper/FSG Technology

Published online by Cambridge University Press:  01 February 2011

J. Gambino ,
T. Stamper ,
H. Trombley ,
S. Luce ,
F. Allen ,
C. Weinstein ,
B. Reuter ,
M. Dunbar ,
V. Samek  and
P. McLaughlin
...Show all authors
J. Gambino
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
T. Stamper
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
H. Trombley
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
S. Luce
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
F. Allen
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
C. Weinstein
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
B. Reuter
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
M. Dunbar
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
V. Samek
Affiliation:
IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452
P. McLaughlin
Affiliation:
IBM Microelectronics, 1580 Route 52, Hopewell Junction, NY 12533
T. Kane
Affiliation:
IBM Microelectronics, 1580 Route 52, Hopewell Junction, NY 12533
Get access

Abstract

A trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E5.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Edelstein, D., Heidenreich, J., Goldblatt, R., Cote, W., Uzoh, C., Lustig, N., Roper, P., McDevitt, T., Motsiff, W., Simon, A., Dukovic, J., Wachnik, R., Rathore, H., Schulz, R., Su, L., Luce, S., Slattery, J., IEDM Proc., 1997, p. 773.Google Scholar
2. Edelstein, D.C., Sai-Halasz, G.A., Mii, Y.J., IBM J. Res. Dev., 39, 383 (1995).Google Scholar
3. Tuan, C.H., Mukherjee-Roy, M., Jo, W.M., Kumar, R., Foo, P.D., Sathappan, S., Ngooi, S.W., in Advances in Resist Technology and Processing XVIII, Ed. by Houlihan, F.M., Proc. of SPIE, 4345, 804 (2001).Google Scholar
4. Pavelchek, E.K., Cernigliaro, M., Trefonas, P., Kwok, A., Coley, S., in Advances in Resist Technology and Processing XVIII, Ed. by Houlihan, F.M., Proc. of SPIE, 4345, 864 (2001).Google Scholar
5. Lyu, G.H., Kim, C.H., Lee, S.K., Yang, H.H., Lee, D.Y., Yoo, J.Y., Lee, J.W., Kim, Y.H., Nam, J.L., Han, W.S., in Metrology, Inspection, and Process Control for Microlithography XV, Ed. By Sullivan, N.T., Proc. SPIE, 4344, 22 (2001).Google Scholar
6. Tian, R., Boone, R., Chheda, S., Smith, B., Tang, X., Travis, E., Wong, D.F., IITC Proc., 2001, p. 48.Google Scholar
7. Leobandung, E., Barth, E., Sherony, M., Lo, S.H., Schulz, R., Chu, W., Khare, M., Sadana, D., Schepis, D., Bolam, R., Sleight, J., White, F., Assaderaghi, F., Moy, D., Biery, G., Goldblatt, R., Chen, T.C., Divari, B., Shahidi, G., IEDM Proc., 1999, p. 679.Google Scholar
8. Stamper, A. K., Adams, C., Chen, X., Christiansen, C., Cooney, E., Cote, W., Gambino, J., Gill, J., Luce, S., McDevitt, T., Porth, B., Spooner, T., Winslow, A., Wistrom, R., to be published in Proc. Advanced Metallization Conf., 2002.Google Scholar
9. Khare, M., Ku, S.H., Donaton, R.A., Greco, S., Brodsky, C., Chen, X., Chou, A., DellaGuardia, R., Deshpande, S., Doris, B., Fung, S.K.H., Gabor, A., Gribelyuk, M., Holmes, S., Jamin, F.F., Lai, W., Lee, W.H., Li, Y., McFarland, P., Mo, R., Mittl, S., Narasimha, S., Nielsen, D., Purtell, R., Rausch, W., Sankaran, S., Snare, J., Tsou, L., Vayshenker, A., Wagner, T., Wehella-Gamage, D., Wu, E., Wu, S., Yan, W., Barth, E., Ferguson, R., Gilbert, P., Schepis, D., Sekiguchi, A., Goldblatt, R., Welser, J., Muller, K.P., Agnello, P., IEDM Proc., 2002, p. 407.Google Scholar
10. Barth, E.P., Ivers, T.H., McLaughlin, P.S., McDonald, A., Levine, E.N., Greco, S.E., Fitzsimmons, J., Melville, I., Spooner, T., Dewan, C., Chen, X., Manger, D., Nye, H., McGahay, V., Biery, G.A., Goldblatt, R.D., Chen, T.C., IITC Proc., 2000, p. 219.Google Scholar
11. Leobandung, E., Barth, E., Sherony, M., Lo, S.H., Schulz, R., Chu, W., Khare, M., Sadana, D., Schepis, D., Bolam, R., Sleight, J., White, F., Assaderaghi, F., Moy, D., Biery, G., Goldblatt, R., Chen, T.C., Davari, B., Shahidi, G., IEDM Proc., 1999, p. 679.Google Scholar