Skip to main content Accessibility help
×
Home

Dry Techniques for Epitaxial Graphene Transfer

Abstract

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Copyright

References

Hide All
1 Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., and Firsov, A.A., Science 306 (5696), 666669 (2004).
2 Wang, X., Linjie, Z., and Mullen, K., Nano Lett. 8 (1), 323327 (2008).
3 Lee, C., Wei, X., Kysar, J.W., and Hone, J., Science 321, 385 (2008).
4 Berger, C., Song, Z.M., Li, T.B., Li, X.B., Ogbazghi, A.Y., Feng, R., Dai, Z.T., Marchenkov, A.N., Conrad, E.H., First, P.N., and Heer, W.A. de, J. Phys. Chem. B 108 (52), 1991219916 (2004).
5 Jernigan, G.G., vanMil, B.L., Tedesco, J.L., Tischler, J.G., Glaser, E.R., Davidson, A., Campbell, P.M., and Gaskill, D.K., Nano Lett. 9 (7), 26052609 (2009).
6 Tedesco, J.L., vanMil, B.L., Myers-Ward, R.L., McCrate, J.M., Kitt, S.A., Campbell, P.M., Jernigan, G.G., Culbertson, J.C., Eddy, C.R., and Gaskill, D.K., Appl. Phys. Lett. 95 (12), 122102 (2009).
7 Bae, S., Kim, H.K., Lee, Y., Xu, X., Park, J.-S., Zheng, Y., Balakrishnan, J., Im, D., Lei, T., Song, Y.I., Kim, J., Kim, S.K., Ozyilmaz, B., Ahn, J.-H., Hong, B.H., and Iijima, S., ArXiv 0912:5485 (2010).
8 Niklaus, F., Enoksson, P., Kalvesten, E., and Stemme, G., in 13th Annual Int. Conf. on Micro Electro Mechanical Systems (Miyazaki, Japan, 2000), p. 247.
9 Tuinstra, F. and Koenig, J.L., J. Chem. Phys. 53 (3), 11261130 (1970).
10 Shivaraman, S., Chandrashekhar, M., Boeckl, J.J., and Spencer, M.G., J. Electron. Mater. 38 (6), 725730 (2009).
11 Glembocki, O.J., Caldwell, J. D., Mittereder, J.A., Calame, J.P., Binari, S.C., and Stahlbush, R. E., Mater. Sci. Forum 600–603, 11111114 (2009).
12 Mas-Torrent, M. and Rovira, C., Chem. Soc. Rev. 37 (4), 827838 (2008).

Keywords

Dry Techniques for Epitaxial Graphene Transfer

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed