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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

  • Jae-Won Lee (a1), Hyong-Soo Park (a1), Yong-Jo Park (a1), Myong-Cheol Yoo (a1), Tae-Il Kim (a1), Hyeon-Soo Kim (a2) and Geun-Yong Yeom (a2)...

Abstract

Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

  • Jae-Won Lee (a1), Hyong-Soo Park (a1), Yong-Jo Park (a1), Myong-Cheol Yoo (a1), Tae-Il Kim (a1), Hyeon-Soo Kim (a2) and Geun-Yong Yeom (a2)...

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