Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-22T10:06:30.971Z Has data issue: false hasContentIssue false
  • English
  • Français

The Driving Pulse width Dependence of The Hysteresis Effect in ZnS:Mn Electroluminescent Devices: A Possible Addressing Method for Memory Tfel Displays

Published online by Cambridge University Press:  10 February 2011

Andy Ying-Guey Fuh
Andy Ying-Guey Fuh*
Affiliation:
Department of Physics, National Cheng-Kung Univ., Tainan, Taiwan 701, ROC
Get access

Abstract

A pronounced hysteresis effect was observed in the brightness versus pulse width response of memory electroluminescent (EL) devices driven near the threshold voltage. The use of this effect to address memory EL displays is suggested. A benefit of this technique is that the display is always operated near threshold with a relatively low dielectric stress. Longer device life might be therefore expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 247
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Inoguchi, T., Takeda, M., Kakihara, Y., Nakata, Y. and Yoshida, M., “Stable High brightness thin-film electroluminescent panels”, SID Int. Symp. Digest Tech. Papers, pp. 84–87, 1974.Google Scholar
2. Mach, R. and Muller, G. O., “Physical concepts of high-field, thin film electroluminescence devices”, phys. status solidi A, 69, 11 (1982).Google Scholar
3. Howard, W. E., Sahni, O. and Alt, P. M., “A simple model for the hysterestic behaviour of ZnS:Mn thin film electroluminescent devices”, J. Appl. Phys. 53, 639 (1982).Google Scholar
4. Marrello, V., Ruhle, W. and Onton, A., “The memory effect of ZnS:Mn ac time-film electroluminescence”, Appl. Phys. Lett. 31, 452 (1977).Google Scholar
5. Yang, K. C. and Owen, S. T., “Mechanisms of nagtive - resistance characteristics in ac film electroluminescent devices”, Proceedings of the Society for Information Displays, 24, 112 (1983).Google Scholar
6. Sahni, O., “Erasing characteristics of a thin-film electroluminescent ZnS:Mn faceplate”, Proceedings of the Society for Information Displays, 24, 123 (1983).Google Scholar
7. Fuh, A., Gallinger, R. P. and Caporaletti, O., “The Effect of Co-evaporation on ZnS:Mn electrominescent characteristics”, Can. J. Phys. 65, 1060 (1987).Google Scholar
8. Cape, J. A., Ketchyel, R. D., and Hale, L. C, IEEE Trans. Electron Devices, ED- 25, 1352 (1978).Google Scholar