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Drift of Arsenic in SiO2 in a Lamp Furnace With a Built-In Temperature Gradient

Published online by Cambridge University Press:  28 February 2011

G. K. Celler ,
L. E. Trimble ,
K. W. West ,
L. Pfeiffer  and
T. T. Sheng
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. E. Trimble
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. T. Sheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have found that arsenic implanted into SiO2 segregates at high temperatures in an oxygen-free ambient into spherical, As-rich inclusions of 50 to 500A in diameter. The phase separation prevents diffusion of arsenic, even at temperatures as high as 1400 °C. However, the As-rich inclusions or droplets can be easily moved in a temperature gradient. They migrate towards the heat source at a rate of 2300A /hour in a gradient of 0.14 °C/μm, at 1405 °C, permitting their efficient removal from the oxide and into silicon. We propose a model to explain the dependence of droplet velocity on their size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 53
Copyright
Copyright © Materials Research Society 1987

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References

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