Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-23T10:45:42.560Z Has data issue: false hasContentIssue false
  • English
  • Français

Drift Mobility Measurements Under Single and Double Injection in a-Si:H

Published online by Cambridge University Press:  26 February 2011

L. Xu ,
G. Winborne ,
M. Silver  and
V Cannella
L. Xu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514 Nankai University, Tianjin, P.R. China
G. Winborne
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
M. Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
V Cannella
Affiliation:
Ovonic Imaging Systems, 1896 Barrett St., Troy, MI 48084
Get access

Abstract

Drift mobility measurements under high level double injection in p/i/n and single injection in M/i/n devices have been made as a function of d.c. voltage and temperature using a small step voltage technique. For comparable ratio's of V/L2 the transit time of injected electrons was of order one decade shorter under double injection than under single injection. The room temperature drift mobility for single injection was approximately 1cm2−1s−1. We attribute the difference in drift transit time to a higher extended state mobility with double injection than with single injection due to the neutralization of charged defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 101
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Silver, M., Adler, D., Shaw, M.P. and Cannella, V., Phil. Mag. B 53, L89 (1986)Google Scholar
2. Tiedje, T., Semicond. and Semimetals 21 C 207 (1984)Google Scholar