Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-19T04:02:29.428Z Has data issue: false hasContentIssue false
  • English
  • Français

Double Beam Photoconductivity Modulation System and its Application to the Characterization of a Process of Photoresist Removal

Published online by Cambridge University Press:  25 February 2011

A. Usami ,
H. Fujiwara ,
T. Nakai ,
K. Matsuki ,
T. Takeuchi  and
T. Wada
A. Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Fujiwara
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Nakai
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
K. Matsuki
Affiliation:
DAINIPPON SCREEN Mfg. Co., Ltd, Furukawa-cho, Hazukashi, Fushimi-ku, Kyoto 612, Japan
T. Takeuchi
Affiliation:
DAINIPPON SCREEN Mfg. Co., Ltd, Furukawa-cho, Hazukashi, Fushimi-ku, Kyoto 612, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Get access

Abstract

A laser/microwave method using two lasers of different wavelengths for carrier injection is proposed to evaluate near surface regions. These lasers are a He-Ne (wavelength=633nm, penetration depth=∼3μm) and a YAG lasers (wavelength=1060nm, penetration depth=∼500μm). Using a microwave probe, the amount of injected excess carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser. It is mainly dependent on the condition of the bulk region when carriers are excited by YAG laser. We refer to microwave intensities detected by the He-Ne and the YAG lasers as the surface-recombination-velocity-related microwave intensity (SRMI) and bulkrelated microwave intensity (BRMI), respectively. We refer to the difference between SRMI and BRMI as relative SRMI (R-SRNI), which is closely related to the condition of surface and surface active region. We evaluate the near surface regions of the samples after plasma and wet etching for removing the photoresist layer. And we evaluate the near surface regions of the samples after a heat treatment which is done to recover the damage introduced by plasma etching. It is found that the R-SRMI method is better suited to near surface region evaluation than conventional lifetime measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 261
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Abe, T., OYO BUTURI 59 pp.272 (1990)(in Japanese)Google Scholar
2. Usami, A., Yamada, N., Matsuki, K., Takeuchi, T. and Wada, T., J. Crystal Growth 103 pp.179 (1990)Google Scholar
3. Usami, A., Yamada, N., Matsuki, K., Takeuchi, T. and Wada, T., Mat. Res. Soc. Symp. Proc. 146 pp. 359 (1989)Google Scholar
4. Usami, A., Fujiwara, H., Yamada, N., Matsuki, K., Takeuchi, T. and Wada, T., The Institute of Electronics, Information and Communication Engineers (IEICE) Transaction on Electronics (to be published)Google Scholar
5. Usami, A., Proc.IEEE Int. Conference on Microelectronic Test Structure, Vol. 4 No. 1 pp.1 (1991)Google Scholar
6. Usami, A., Jintate, S. and Kudo, B., OYO BUTURI 49 pp.1192 (1980) (in Japanese)Google Scholar
7. Usami, A. and Kushida, T., OYO BUTURI 50 pp.607 (1981) (in Japanese)Google Scholar
8. Usami, A., Shiraki, H., Fujiwara, H., Abe, R., Osamura, N., Ichimura, M. and Wada, T., Mat. Res. Soc. Symp. Proc. 224 pp.215 (1991)Google Scholar
9. Fuller, C.S., DitzenberFer, J.A., Hannay, N.B. and Buehler, E., Phys. Rev. 96 pp.833 (1954)Google Scholar
10. Tokuda, Y., Shimizu, N. and Usami, A., Jpn.J.Appl Phys. 18 No.2 pp.309 (1979)Google Scholar