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Dose-Dependent “Activation Energy” For Blistering Phenomenon In Hydrogen-Implanted Silicon
Published online by Cambridge University Press: 10 February 2011
Abstract
Silicon samples were implanted with 100 keV hydrogen at doses ranging from 4.9 to 9.9 × 1016 H/cm2. The samples were then annealed in an argon atmosphere using a special furnace mounted on a microscope stage. The time required to observe the onset of Si blistering was then measured as a function of temperature for the various hydrogen doses. An Arrhenius plot of the time-temperature data was made and an “activation energy” was calculated for each dose. The measured activation energies range from 2.6 to 1.1 eV corresponding to 4.9 to 9.9 × 1016 H/cm2, respectively. A qualitative explanation of the dose dependence is given in terms of a stressinduced lowering of the Si-Si bond energy. The hydrogen distribution as a function of annealing temperature was monitored using the 1H(15N,αγ)12C nuclear reaction. The results from the hydrogen profiling indicate that the hydrogen profile flattens at 500°C and concentrates at 550 °C.
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- Copyright © Materials Research Society 1998
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